Those cell sizes are theoretical anyway. They do exist, but on sample chips optimized for SRAM. If you design a chip and select an IP macro for SRAM the densi

Those cell sizes are theoretical anyway. They do exist, but on sample chips optimized for SRAM. If you design a chip and select an IP macro for SRAM the density you actually get may be 3x or larger per bit. This is due to compromises on the process the rest of the chip goes through, the need for row and column periphery, ECC, and ports. One advantage the Z-cache has at AMD is the cache chip appears to be optimized for SRAM. It has 2x the capacity of the cache on the CPU chip even though it directly matches the overall cache outline on the base. The main problem with scaling is that SRAM found an optimal layout in FinFET with no significant wiring issues. While scaling from 7nm on down none of the tricks that benefit logic density - fewer lines, reduced gaps, contacts over active gate - SRAM does not need them. It was already optimal. The only thing it benefits from is honestly finer features, which is happening only slowly. The next major jump expected is CFET where going vertical is matched by a new optimal pattern that takes advantage if the N and P being above each other. That is generally expected for N2/20A processes.