TLDR: There is a major mismatch between the device physics of the academic group and what is being marketed/sold. If the actual device they were selling repres

TLDR: There is a major mismatch between the device physics of the academic group and what is being marketed/sold. If the actual device they were selling represented what they did in this technical work, I would be very, very excited. The I/V curve looks great. BUT, compare that figure to the I/V curve represented in the longer datasheet (linked to in parent comment). A one million fold increase in resistance in 5nS- That isn't analog at all. It could be fairly emulated as almost a flip-flop with just a few transistors!! Although a binary memristor at scale might be more interesting as a memory (eg ReRAM), at this scale meant for neuromorphic analog applications, it becomes utterly uninteresting. So to be honest I am baffled how they went from such a promising inspiration to a completely bland packaged device. Two possibiliies come to mind: 'they' are entirely different groups, or a major mis-marketing is occurring in the interest of gaining some funds for future R&D.