> It's a physical quantity per some unit of spatial measurement so the units still don't match up b/c in one case the transistors are stacked per volume & in th

> It's a physical quantity per some unit of spatial measurement so the units still don't match up b/c in one case the transistors are stacked per volume & in the other case per area. "Planar" and "3D" in this context refers to the shape of the transistors themselves. In a planar transistor the functional structure is spread out in the area, like this: https://en.wikipedia.org/wiki/File:MOSFET_functioning_body.svg https://en.wikipedia.org/wiki/File:MOSFET_functioning_body.s... while 3D transistors spread into the volume: https://en.wikipedia.org/wiki/Multigate_device#/media/File:Doublegate_FinFET-en.svg https://en.wikipedia.org/wiki/Multigate_device#/media/File:D... However the active devices are still just one layer. This isn't like 3D NAND where you actually have transistors on top of each other. So the comparison only considers the area for both kinds of transistors.