4 ms·
> In a transistor, the voltage of the gate lying on top of the channel controls the conductivity of the channel beneath it, either creating an insulator or “dep
by Symmetry 1y ago
> In a transistor, the voltage of the gate lying on top of the channel controls the conductivity of the channel beneath it, either creating an insulator or “depletion region”, or leaving the silicon naturally conductive.
That's... not how this works at all. Eventually the depletion region where the positive or negative charge carriers (for p or n doped silicon) deplete far enough and then at the threshold voltage inversion happens when the opposite sort of charge carrier start to accumulate along the oxide and allow conduction. By surrounding the channel there's less space for a depletion region and so inversion happens at lower voltages, leading to higher performance. Same as people used to do with silicon on oxide.
The Wikipedia article has nice diagrams:
https://en.wikipedia.org/wiki/MOSFET https://en.wikipedia.org/wiki/MOSFET
- kurthr 1y agoWhat's interesting is that with modern GAA and nanosheet transistors at the "1-2nm" scale (really ~6-12nm gate length) is that there are only about 50-100k silicon atoms. That means that the channels are inherently intrinsic. You can't really have doping when there's statistically less than an atom. There's a nice review from 2023. https://semiengineering.com/what-designers-need-to-know-about-gaa/ https://semiengineering.com/what-designers-need-to-know-abou... https://www.semiconductor-digest.com/the-shape-of-tomorrows-semiconductor-technology/ https://www.semiconductor-digest.com/the-shape-of-tomorrows-... This is more recent with pretty pictures. The key is that all increases in transistor count are now based on either stacking layers in the silicon (like flash scaling), stacking die with chiplets (we're already at 12-16 die for HBM) or scaling beyond the reticle limit (there's a lot of investment in larger substrates right now). None of these help cost scaling and all have huge yield challenges. Moore's law really ends when the investors and CFOs decide it does. The generative AI boom has extended that for a while.
- markhahn 1y agofrom a strict ML perspective, stacking, chiplets, multi-reticle are not going to help. that is, ML is about periodic shrinks producing squared improvements to device density at iso-area, and thus costs. if you have to change equipment, ML (in this narrow sense) is out the window. if you have to spend linear resources to stack die or chiplets, that's also not ML-compatible (because linear, not 1/(shrink^2)) vertical flash is interesting because it appears to scale surprisingly well - that is, extra layers don't seem to exponentially degrade yield. I'm not sure any of that applies to logic, though.
- kurthr 1y agoYep, only yield improvements and equipment depreciation are really in the cards. Cost per transistor increased from 7nm to 5nm, but we're about at breakeven with 3nm again. If there's not real fab competition at 2nm then prices per transistor likely won't fall. I suspect the same is true at 1nm. It doesn't feel like any of the alternatives (CNT etc) are really able to step up right now either. https://www.chipstrat.com/p/what-happens-if-tsmc-controls-it https://www.chipstrat.com/p/what-happens-if-tsmc-controls-it My feeling is that algorithmic improvements to LLMs may continue for another order of magnitude or two though. That could continue the scaling for a while. Of course fixed development costs are now over $1B at 2nm, so if you're not making a large number of die (>1M at $1k/ea), it makes no sense to scale.
- deleted 1y ago[deleted]