3 ms·

I assume that if people are going to the trouble to literally irradiate the material in order to get what they need, they can't get the results by just mixing i

• cyberax 2y ago
  Because there is no other way to produce homogenous enough thick wafers of doped silicon. Other methods rely on diffusion from the surface, which is not enough for this case. And doping during crystal growth doesn't produce homogenous enough silicon.
• CorrectHorseBat 2y ago
  https://www.waferworld.com/post/the-complete-guide-to-doping-in-semiconductors-what-is-it-and-why-is-it-necessary https://www.waferworld.com/post/the-complete-guide-to-doping... It's apparently possible for boron doping. I think because phosphorus is bigger than silicium you'll get too many defects in the crystal, while with the smaller boron it is not an issue.