Here's what ST says[1]: The very high electron mobility of GaN material allows devices with very low on-resistance and exceptionally high switching frequencies

Here's what ST says[1]: The very high electron mobility of GaN material allows devices with very low on-resistance and exceptionally high switching frequencies, which are key advantages in the design of next generation power systems, especially those for electric vehicles and renewable energy applications. Regarding the band gap[2]: It has a wide bandgap of 3.4 eV and an electron mobility of 1,700 cm2/Vs. Comparatively, Silicon sits at 1.1 eV and 1,400 cm2/Vs. GaN’s inherent properties thus result in a higher breakdown voltage and lower on-state resistance, which means that the component can more efficiently handle greater loads compared to a similar-sized silicon device, which then leads to a lower bill of materials. [1]: https://www.st.com/content/st_com/en/about/innovation---technology/GaN.html https://www.st.com/content/st_com/en/about/innovation---tech... [2]: https://blog.st.com/powergan/ https://blog.st.com/powergan/