While not generally available at this voltage level, SiC VJFETs do not have an SOA limit (on drain-source current and voltage; the p-n junction from the gate to

While not generally available at this voltage level, SiC VJFETs do not have an SOA limit (on drain-source current and voltage; the p-n junction from the gate to the source-drain channel has current limits for non-capacitive current (i.e., forward conduction and reverse biased avalanche mode; though with a high enough gate impedance in the off-state the drain-source connection is avalanche proof to full drain current for as long as it takes for the channel to reach it's ~500C limit)). It's generally sad that power JFETs are so neglected, because e.g. a normally-on switch in a buck eliminates the auxiliary startup supply, and the absence of a gate oxide allows designing with the junction's clamping activity in mind. Also the forward conduction gate-source is a diode temperature sensor literally right at the channel.