I design chips in similar technologies. What these binned parts are fast-fast parts, meaning both PMOS and NMOS transistors have lower threshold voltage than ty

I design chips in similar technologies. What these binned parts are fast-fast parts, meaning both PMOS and NMOS transistors have lower threshold voltage than typical due to stochastic process od production or intentional skewing of the process during fabrication. You can run them at faster clock speeds. If you stack higher voltage on top you can run quite a bit faster. For a while.. The transistors age. Aging is an exponential function of voltage level and temperature, and lunear function of clock frequency. With aging the device threshold voltages increase rapidly, so the devices get slower. On top of this there is electromigration (EM). With EM the interconnect resistance increases. These effects combined, you have a horrible product lifetime at those cobditions. After failung to work at 5-6 GHz at 1.4V, it would most likely still work at a lower clock frequecy, because in essence it becomes a slower chip. Now the answer your question: A fast binned part operating at nominal conditions will perform exactly the same as the same sdries typical chip. The power consumption would be like 10% or so higher due to higher dynamic power and leakage. The lifetime would be muuuch more longer than a typical device though. So, in short, wouldn't be outperforming anything.