I have no inside information, but gate-all-around and backside power are both pretty big developments. If you remember the rise of finfet, gate-all-around will

I have no inside information, but gate-all-around and backside power are both pretty big developments. If you remember the rise of finfet, gate-all-around will probably be a similar step up (maybe slightly smaller). My guess is backside power is the less impactful of the two, and a little less directly quantifiable, but for route-limited designs it should enable 10-20% higher density which reduces cost and improves performance. It may also deliver higher quality power supplies, which improves power efficiency and maximum clock frequency. It's hard to directly answer "how consequential", but it seems like it could be as significant as the step to TSMC 16nm.