I think the other parameters are way more difficult to get right than any optical system alignment considerations. Things like statistical process control make

I think the other parameters are way more difficult to get right than any optical system alignment considerations. Things like statistical process control make photolithography look less scary. You can check if you correctly patterned the wafer almost immediately. You won't know if the layer is any good until many process steps later. Maybe not for sure until EDS. Tuning the interactions between manufacturing processes is the actual secret sauce that all the manufacturers are trying to protect. How much dose on the EUV machine depends a lot on how you intend to etch the wafer. Imagine iteration cycles measured in months for changing individual floating point variables.