You have it backwards. Programming means moving electrons (negative charge) into the floating gate of the flash transistor. This negative charge blocks the tran

You have it backwards. Programming means moving electrons (negative charge) into the floating gate of the flash transistor. This negative charge blocks the transistor from turning on, a state which is traditionally called "zero". Erasing means removing the trapped charge, which allows the transistor to turn on ("one"). With differential current sensing you could choose either state to be one or zero. I've only worked on NOR flash, so maybe in NAND flash it's the other way around. Regardless of what you call the states, what makes flash flash (as opposed to EEPROM) is that it's erased in large blocks. So the chips should come out of the factory erased. Whether that means all ones or all zeros is up to the manufacturer.