SRAM cells need 6 transistors. DRAM cells need a transistor and a capacitor. 6 transistors aren't dense, so are capacitors in integrated circuits. Comparativel

SRAM cells need 6 transistors. DRAM cells need a transistor and a capacitor. 6 transistors aren't dense, so are capacitors in integrated circuits. Comparatively with NAND, it only needs one (floating gate) transistor. Samsung is working on 3D-stacked DRAM cells: https://www.i-micronews.com/samsung-electronics-gearing-up-to-develop-worlds-first-3d-dram/ https://www.i-micronews.com/samsung-electronics-gearing-up-t...