3 ms·
> I would assume you could dope in interconnects, between the sides. Actually, you probably can't; the distance between the sides is practically astronomical c
by a1369209993 4y ago
> I would assume you could dope in interconnects, between the sides.
Actually, you probably can't; the distance between the sides is practically astronomical compared to the horizontal feature size. I don't remeber the exact actual dimensions, but if you assume a a 1-nm trace is equivalent to a 10-meter road, then a 1-mm wafer thickness would be equivalent a 10'000-km planetary diameter, so you're getting close to the scale of routing a internet cable through the center of the earth. (At least it's not molten, I guess?) And doping generally works by diffusion, not drilling a hole.
- nomel 4y agoDoesn't back illuminated CCD somewhat fit the bill? Maybe that's cheating a bit. I naively assumed you could get an interconnect through, by taking up a large area of silicon. :)