SiC is a wide band gap semi conductor so it takes a much higher temperature for the intrinsic carrier concentration to rise to the point where it is no longer a

SiC is a wide band gap semi conductor so it takes a much higher temperature for the intrinsic carrier concentration to rise to the point where it is no longer a semi conductor and just a conductor - it was 12 years ago since I finished my PhD in SiC and related devices so I can’t explain in much more detail but that’s the crux of it