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I think SiC devices will be a way station on the road to diamond devices for extreme environments. GaN devices will be the next after SiC, then on to diamond.

I think SiC devices will be a way station on the road to diamond devices for extreme environments. GaN devices will be the next after SiC, then on to diamond. I've seen a diamond FET operating at 700°C. Devices like that could use the Venusian atmosphere for cooling.

jl2718 5y ago
GaN is only really good for applications requiring direct bandgaps like LEDs and extremely high electron mobility like plasma micro-antennas. I believe that SiC will eventually replace the photonic applications with direct-band gap strains and dopants, but not the high-mobility applications.