> If we go by this figure, Hyundai's EVs need to waste 10% of its energy on Si chips. Most of it is not lost in the silicon, but in the interconnects (wiring

> If we go by this figure, Hyundai's EVs need to waste 10% of its energy on Si chips. Most of it is not lost in the silicon, but in the interconnects (wiring and connectors) and motor(s). SiC is better (more robust) than Si with high voltage, high current, and/or high temperature. Specifically, kilovolt-level, kiloamp-level, and temperatures above 150 celsius. If you double your battery voltage from 400V (current standard) to 800V, you halve your resistive losses in the "wires" for the same electrical power demanded. Silicon MOSFETS that can withstand a kilovolt and a kiloamp are very big and very expensive. You get more power delivered for the same power leaving the battery. Size: SiC's very high thermal conductivity means less of a margin of safety for secondary breakdown. SiC tolerates higher current density (amps/square mm) than Si, so smaller devices are possible, saving mass. Its temperature stability allows it to be sintered to the package heatsink--further improving heat removal. Tolerance for high temperatures means you need less mass and volume for heat dissipation structures. Other efficiencies: With very high currents (kiloamp) and medium frequency switching, SiC IGBTs provide more benefits, because rather than being directly proportional to current as with MOSFETs, losses are proportional to the log of current. Alternatively, doubling the battery voltage again to 1.5kV (and so halving the currents) might allow Hyundai to use more aluminium for the "wires", with a cost saving over copper.