It's a pretty clever process as some of the more critical steps (gate oxide, poly deposition) are done elsewhere. This allows for very stable transistors withou

It's a pretty clever process as some of the more critical steps (gate oxide, poly deposition) are done elsewhere. This allows for very stable transistors without a lot of Vth shift. I also like his use of resits for the ILD. Maybe it would be possible to replace some of the more agreessive acids used for poly and Al etch with KOH and lowly concentrated HF. Also, one could also use alloy doping with aluminium to create the junctions and skip the need for a high temperature diffusion. But that would probably not result in a 10µm process and present yield issues...