I don't know much about STT-MRAM, so I'll avoid making a fool of myself. Looking more into the details is on my TODO. Look at the datasheets and make your choic

I don't know much about STT-MRAM, so I'll avoid making a fool of myself. Looking more into the details is on my TODO. Look at the datasheets and make your choice, as usual. I am not sure how the situation will evolve on either side, my understanding is that FRAM could be more energy-efficient. Well, hafnium can be used to make ferroelectric crystals, that are necessary for ferroelectric memories (FRAM). The most used ferroelectric material is PZT, which has lead, and is a nightmare for CMOS compatibility due to contamination issues, and temperatures. It's a bit light on the details, but maybe I should point you towards the video that explains our project: https://www.youtube.com/watch?v=M8tL-nN7G-A https://www.youtube.com/watch?v=M8tL-nN7G-A The most exciting part might not be the performance (though it looks good), but the way ferroelectrics can be used for new circuits (variable treshold transistors thanks to FeFETs). Hafnium has been used in gate oxides for a few years now so it's quite compatible with CMOS.