>"Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with r

>"Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline substrate. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the crystalline substrate is defined in terms of the orientation of the crystal lattice of each material." [...] "The term epitaxy comes from the Greek roots epi (ἐπί), meaning "above", and taxis (τάξις), meaning "an ordered manner"." [...] "Types o Homoepitaxy is a kind of epitaxy performed with only one material, in which a crystalline film is grown on a substrate or film of the same material. This technology is often used to grow a film which is more pure than the substrate and to fabricate layers having different doping levels. In academic literature, homoepitaxy is often abbreviated to "homoepi". o Homotopotaxy is a process similar to homoepitaxy except that the thin-film growth is not limited to two-dimensional growth. Here the substrate is the thin-film material. o Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which crystals cannot otherwise be obtained and to fabricate integrated crystalline layers of different materials. Examples include silicon on sapphire, gallium nitride (GaN) on sapphire, aluminium gallium indium phosphide (AlGaInP) on gallium arsenide (GaAs) or diamond or iridium,[2] and graphene on hexagonal boron nitride (hBN).[3] o Heterotopotaxy is a process similar to heteroepitaxy except that thin-film growth is not limited to two-dimensional growth; the substrate is similar only in structure to the thin-film material. o Pendeo-epitaxy is a process in which the heteroepitaxial film is growing vertically and laterally at the same time. In 2D crystal heterostructure, graphene nanoribbons embedded in hexagonal boron nitride[4][5] give an example of pendeo-epitaxy. Epitaxy is used in silicon-based manufacturing processes for bipolar junction transistors (BJTs) and modern complementary metal–oxide–semiconductors (CMOS), but it is particularly important for compound semiconductors such as gallium arsenide. Manufacturing issues include control of the amount and uniformity of the deposition's resistivity (PDS: or control of the "ability to conduct" -- which is the opposite/inverse of resistance, relative to voltage, down a given path, etc.) >and thickness, the cleanliness and purity of the surface and the chamber atmosphere, the prevention of the typically much more highly doped substrate wafer's diffusion of dopant to the new layers, imperfections of the growth process, and protecting the surfaces during manufacture and handling. [...] >Epitaxy is used in nanotechnology and in semiconductor fabrication. [...] "In molecular beam epitaxy (MBE), a source material is heated to produce an evaporated beam of particles. These particles travel through a very high vacuum (10−8 Pa; practically free space) to the substrate, where they condense. MBE has lower throughput than other forms of epitaxy. This technique is widely used for growing periodic groups III, IV, and V semiconductor crystals.[16][17] Doping An epitaxial layer can be doped during deposition by adding impurities to the source gas, such as arsine, phosphine, or diborane (PDS: There are probably all sorts of ways to do this, in theory any chemical or chemical compound can act as a dopant... My curiosity is, could light or electricity or some other electromagnetic wave source -- be used as a dopant in lieu of a chemical one, and if so, how?) >The concentration of impurity in the gas phase determines its concentration in the deposited film. As in chemical vapor deposition (CVD), impurities change the deposition rate. Additionally, the high temperatures at which CVD is performed may allow dopants to diffuse into the growing layer from other layers in the wafer ("out-diffusion"). Also, dopants in the source gas, liberated by evaporation or wet etching of the surface, may diffuse into the epitaxial layer ("autodoping"). The dopant profiles of underlying layers change as well, however not as significantly."