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High-electron-mobility transistor (HEMT)

• peter_d_sherman 6y ago
  >"HEMT transistors are able to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in high-frequency products such as cell phones, satellite television receivers, voltage converters, and radar equipment." [...] >"Advantages of HEMTs are that they have high gain, this makes them useful as amplifiers; high switching speeds [...] and extremely low noise values because the current variation in these devices is low compared to other [transistor types]..." [...] >"In contrast to a modulation-doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate..." [...] >"Applications (eg for AlGaAs on GaAs) are similar to those of MESFETs – microwave and millimeter wave communications, imaging, radar, and radio astronomy – any application where high gain and low noise at high frequencies are required. HEMTs have shown current gain to frequencies greater than 600 GHz and power gain to frequencies greater than 1 THz.[7] (Heterojunction bipolar transistors were demonstrated at current gain frequencies over 600 GHz in April 2005.)"