3 ms·
Some wrinkles in the article, it looks like it was well-translated from the original, but figure 7 is explained "on the right" twice; one instance should say "o
by myself248 6y ago
Some wrinkles in the article, it looks like it was well-translated from the original, but figure 7 is explained "on the right" twice; one instance should say "on the left", and figure 8 is missing entirely.
I wonder if the FDSOI back-charge technique could be cycled to provide periods of immunity, then "dump" the stored charge (while holding the chip in reset), then become immune again..
Fascinating stuff! Mostly over my head! Literally! :)
- amartology 6y agoI'll fix it, thanks. The problem occurred because it was not translated, but more "rewritten", and this particular figure was changed. Regarding actual question, that wouldn't work unfortunately. "Dumping" isn't possible as effects are complex and nonlinear. Maximizing total dose hardness via back gate voltage would require complex voltage control. But there could be something, for example, if one tries to use accelerated high-temperature annealing.