>...the experimental hBN devices scored 129 terahertz. > Although the research device was demonstrated using gold electrodes on a diamond substrate, Akinwande

>...the experimental hBN devices scored 129 terahertz. > Although the research device was demonstrated using gold electrodes on a diamond substrate, Akinwande says the process for making these RF switches is compatible with the CMOS processes used in foundries. He points to research done at several universities and TSMC showing the integration of hBN with silicon. Good stuff. This can even be useful for new particle accelerators. There is so much stuff in the THz tech tree.