3 ms·
Pretty cool, I think the rub will be how well they can control the PN boundary and hence the switching thresholds. The simpler NOR gate was pretty cool too, so
by ChuckMcM 7y ago
Pretty cool, I think the rub will be how well they can control the PN boundary and hence the switching thresholds.
The simpler NOR gate was pretty cool too, so their next step should be to build a RAM chip (either a 2 gate equivalent dynamic cell or 4 gate equivalent static cells) If they can do that, then they can show that the process can be controlled well enough for reliable gate fabrication.
Then the step after that might be mixed mode analog/digital circuit paths. Process control gets even harder when you're doing analog as non-linearity propagates and you can't ever get rid of it.
A typical zener[1] has a variance of >100mV for its breakdown voltage. The "easy" analog circuits in my radio need better than 40 dB of dynamic range which is more like 1 mV so 100 times better than a zener. I'll have to read up more on the device physics to see if getting that level of precision or better is really practical.
[1] http://www.vishay.com/docs/84830/plzseries.pdf http://www.vishay.com/docs/84830/plzseries.pdf
- magicalhippo 7y ago> A typical zener[1] has a variance of >100mV for its breakdown voltage. My interpretation was that that was the point of the substrate biasing: "A second tunnelling junction, represented by two horizontal lines in the device diagram, biases the device so that it is ‘on’ (but not saturated) when the tunnel terminal is open-circuit. While this represents a continuous current flow to ground during operation, tunnel current is typically only 2-5nA [...]"