3 ms·
I take issue with this article. Electrons do bunch up on sharp corners, as far as high voltage design is concerned. Sharp corners cause inductance when the cu
by madengr 7y ago
I take issue with this article.
Electrons do bunch up on sharp corners, as far as high voltage design is concerned.
Sharp corners cause inductance when the current has to “turn the corner”. An infinitely sharp edge would have infinite inductance. Think of a charge having momentum, and the H field the result of that momentum. You can’t just change it.
This is more troublesome at RF due to the currents crowding at the edges of the line, where the path length is now different for inside and outside radius, irrespective of lumped discontinuities.
In the RF world we mitre the bends, and sometimes used swept bends. The swept bends supposedly radiate more than mitered, but have not proven that to myself.
The case where you do want sharp, 90 degree bends are on electrically small monopole type antennas. The inductance will compensate for the high capacitive reactance of the antenna.
- aswanson 7y agoHave you ever done a design specifying molex connectors?
- madengr 7y agoMost have a Molex brand connector, though nothing > 50 VDC. I use a lot of the Molex Pico-Lock connectors, and similar sizes; all board level stuff. What I was revering to in the above post is the susceptibility to breakdown and corona discharge from sharp edges (example at link below). I have done some static E field modeling in CST for HV breakdown in potted modules. https://www.comsol.se/paper/modeling-of-avalanche-breakdown-in-silicon-and-gallium-nitride-high-voltage-diod-66642 https://www.comsol.se/paper/modeling-of-avalanche-breakdown-...