You end up with fully depleted devices to avoid dopant effects. And tunneling loss is already an issue, and is mitigated with better work function metal design.

You end up with fully depleted devices to avoid dopant effects. And tunneling loss is already an issue, and is mitigated with better work function metal design. Sharp bends don't happen because they cause large fields which in turn cause dielectric breakdown. Most critical metal layers are oriented in a single direction. 2D printing with EUV isn't really an issue. There are three components which make the area of a cell that are used to infer the scaling. The fin pitch, the metal pith, and the cell height (track count). An older technology (22nm) might have a 9track, 40nm by 60nm size. 14nm would be 9T2842, 10 would be 7.5T2638, 7 would be 6.5T2638 with SDB, and 5 might be 5.5T2230 Numbers very approximate, but the key is that design compaction (which requires major physical integration changes) coupled with reduced key pitch shrink. The nice part is that you tend to get more design innovation, because you are no longer competing with shrink. And the relative cost of additional masks and layers is low.