It isn't so far off the fin width. And practically, it isn't a terrible scaled density metric. Increasingly bad, but not terribly so. On the 5nm: it is more us

It isn't so far off the fin width. And practically, it isn't a terrible scaled density metric. Increasingly bad, but not terribly so. On the 5nm: it is more useful to think about scaling minima in terms of unit cells. For silicon, 5nm is about 10unit cells, where silicon behaves approximately.bulk-like (like silicon). When you make it thinner, it is statistically no longer uniform. The same logic applies everywhere: you need roghly 5nm of fin 5 nm of gate, and 5nm of space: fin pitch is limited at 20nm. For metals it is the same, but worse for resistance reasons, so pitch is limited to about 20-25nm. Gate is even worse. Even though I think all of this is sort of clearly true, there is so much room for innovation elsewhere. I. Package, stacking, memory....there are 4-5 orders of magnitude out there in power-performance. In silicon!