1. As we move to lower nodes, high carrier mobility materials such as GaAs actually perform worse than silicon due to increased source/drain direct tunneling.

1. As we move to lower nodes, high carrier mobility materials such as GaAs actually perform worse than silicon due to increased source/drain direct tunneling. See: https://ieeexplore.ieee.org/document/7479214 https://ieeexplore.ieee.org/document/7479214 2. Most III-V materials have excellent electron mobility, making for great n-type transistors, but tend to have poor hole mobility which means bad p-type transistors. Germanium has high hole mobility, and it is already used in very small quantities to boost performance (see "germanium stressors") 3. Most III-Vs have no native oxide, nowadays at 28nm onwards due to the use of high-k dielectrics. However: Until recently, the growth of oxides on III-V materials without defects such as fermi level pinning was a Hard Problem.