3 ms·
When I was in semiconductor manufacturing, we tried using a hafnium oxide layer in the capacitor dielectric for our DRAM. It did not go well, if I recall corre
by sevensor 10y ago
When I was in semiconductor manufacturing, we tried using a hafnium oxide layer in the capacitor dielectric for our DRAM. It did not go well, if I recall correctly (10 years back). Not for design reasons -- we were using it for its dielectric properties, not its ferromagnetic ones -- but for process reasons. It was hell on the diffusion furnaces. Flakes everywhere, wafers sticking. Lots of angry morning meetings.