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If I understand it correctly, it is the process of depositing the HfO2 onto the wafer in a way that it retains its ferroelectric properties and is compatible wi
by RandomOpinion 10y ago
If I understand it correctly, it is the process of depositing the HfO2 onto the wafer in a way that it retains its ferroelectric properties and is compatible with other chipmaking processes that is proprietary. Depositing it improperly would result in defects at the junction between the HfO2 and the underlying gate that would render the FeFET nonfunctional.
- sevensor 10y agoWhen I was in semiconductor manufacturing, we tried using a hafnium oxide layer in the capacitor dielectric for our DRAM. It did not go well, if I recall correctly (10 years back). Not for design reasons -- we were using it for its dielectric properties, not its ferromagnetic ones -- but for process reasons. It was hell on the diffusion furnaces. Flakes everywhere, wafers sticking. Lots of angry morning meetings.