Transistors built on GaN and SiC processes can operate with a junction temperature of up to around 200C. As you say, that's a pretty big deal for RF power trans

Transistors built on GaN and SiC processes can operate with a junction temperature of up to around 200C. As you say, that's a pretty big deal for RF power transistors, as they can dissipate quite a lot more power without blowing up. Another issue with running nanometer-scale chips hot, from what I understand, is that the dopants will start to diffuse into the silicon, and because the feature size is so small, you eventually get transistor failures.