The things that change with temperature is that the number of charge carriers per volume of un-doped silicon goes up while the speed with which charge carriers

The things that change with temperature is that the number of charge carriers per volume of un-doped silicon goes up while the speed with which charge carriers move through silicon goes down. More carriers independent of doping means more current through transistors channels even when gate voltage isn't applied, but there are ways to be conservative and design around that.