dr_zoidberg's reply males a lot of sense - it sounds like you experienced a lot of basic retention and errors, which is reasonably common on modern small proces

dr_zoidberg's reply males a lot of sense - it sounds like you experienced a lot of basic retention and errors, which is reasonably common on modern small process NAND. Since you're executing a block erase at the device level by doing the secure erase operation. It's setting all those pages that leaked charge - and by extension, your data - back to 1s,so they're ready to be written again. I'm a little surprised that the stale time was on the order of a year. Have you experienced any other failures?